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- Manufacturer No：STW22NM60N
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STW22NM60N
- SKU：4589115
- Description：MOSFET N-CH 600V 16A TO-247
User Guide
User Guide
STW22NM60N Details
MOSFET N-CH 600V 16A TO-247
STW22NM60N Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Packaging: Tube
- Number of Pins: 3
- REACH SVHC: No SVHC
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- DS Breakdown Voltage-Min: 600V
- Gate to Source Voltage (Vgs): 30V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Continuous Drain Current (ID): 16A
- Subcategory: FET General Purpose Power
- Vgs (Max): ±30V
- Additional Feature: AVALANCHE RATED
- Length: 15.75mm
- Fall Time (Typ): 38 ns
- Power Dissipation-Max: 125W Tc
- Current - Continuous Drain (Id) @ 25°C: 16A Tc
- Series: MDmesh? II
- Turn-Off Delay Time: 74 ns
- Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 50V
- Base Part Number: STW22N
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Part Status: Obsolete
- Number of Terminations: 3
- Pin Count: 3
- Threshold Voltage: 3V
- Terminal Finish: Tin (Sn)
- Drain to Source Voltage (Vdss): 600V
- Terminal Position: SINGLE
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Package / Case: TO-247-3
- Turn On Delay Time: 11 ns
- Power Dissipation: 125W
- Pulsed Drain Current-Max (IDM): 64A
- Width: 5.15mm
- Drain-source On Resistance-Max: 0.22Ohm
- Height: 20.15mm
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Rds On (Max) @ Id, Vgs: 220m Ω @ 8A, 10V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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