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- Manufacturer No：STW23NM60ND
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STW23NM60ND
- SKU：4559278
- Description：MOSFET N-channel 600V, 20A FDMesh II
User Guide
User Guide
STW23NM60ND Details
MOSFET N-channel 600V, 20A FDMesh II
STW23NM60ND Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Part Status: Obsolete
- Number of Terminations: 3
- Pin Count: 3
- Gate to Source Voltage (Vgs): 25V
- Terminal Finish: Tin (Sn)
- Element Configuration: Single
- Power Dissipation: 150W
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Operating Temperature: 150°C TJ
- Package / Case: TO-247-3
- Resistance: 180mOhm
- Vgs(th) (Max) @ Id: 5V @ 250μA
- Length: 15.75mm
- Turn On Delay Time: 21 ns
- Continuous Drain Current (ID): 19.5A
- Pulsed Drain Current-Max (IDM): 78A
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Series: FDmesh? II
- Rds On (Max) @ Id, Vgs: 180m Ω @ 10A, 10V
- Base Part Number: STW23N
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Packaging: Tube
- Number of Pins: 3
- REACH SVHC: No SVHC
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 600V
- FET Type: N-Channel
- Threshold Voltage: 4V
- Operating Mode: ENHANCEMENT MODE
- Subcategory: FET General Purpose Power
- Fall Time (Typ): 40 ns
- Turn-Off Delay Time: 90 ns
- Rise Time: 45ns
- Vgs (Max): ±25V
- Power Dissipation-Max: 150W Tc
- Width: 5.15mm
- Height: 20.15mm
- Avalanche Energy Rating (Eas): 700 mJ
- Current - Continuous Drain (Id) @ 25°C: 19.5A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 50V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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