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- Manufacturer No：STW33N60DM2
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STW33N60DM2
- SKU：4553839
- Description：STMICROELECTRONICS STW33N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 24 A, 600 V, 0.11 ohm, 10 V, 4 V
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STW33N60DM2 Details
STMICROELECTRONICS STW33N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 24 A, 600 V, 0.11 ohm, 10 V, 4 V
STW33N60DM2 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- REACH SVHC: No SVHC
- Drain to Source Voltage (Vdss): 600V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Lifecycle Status: ACTIVE (Last Updated: 7 months ago)
- Package / Case: TO-247-3
- Vgs (Max): ±25V
- Power Dissipation-Max: 190W Tc
- Series: MDmesh? DM2
- Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 100V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- ECCN Code: EAR99
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Pins: 3
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Factory Lead Time: 17 Weeks
- FET Type: N-Channel
- Threshold Voltage: 4V
- Continuous Drain Current (ID): 24A
- Vgs(th) (Max) @ Id: 5V @ 250μA
- Current - Continuous Drain (Id) @ 25°C: 24A Tc
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Rds On (Max) @ Id, Vgs: 130m Ω @ 12A, 10V
- Base Part Number: STW33N
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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