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- Manufacturer No：CSD18535KCS
- Manufacturer：Texas Instruments
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：CSD18535KCS
- SKU：557069
- Description：This 60 V, 1.6 m, TO-220 NexFET power MOSFET is designed to minimize losses in power conversion applications.
User Guide
User Guide
CSD18535KCS Details
This 60 V, 1.6 m, TO-220 NexFET power MOSFET is designed to minimize losses in power conversion applications.
CSD18535KCS Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Lead Free: Contains Lead
- DS Breakdown Voltage-Min: 60V
- Reach Compliance Code: not_compliant
- Element Configuration: Single
- FET Type: N-Channel
- Lifecycle Status: ACTIVE (Last Updated: 2 days ago)
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Package / Case: TO-220-3
- Case Connection: DRAIN
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Pulsed Drain Current-Max (IDM): 400A
- Width: 8.7mm
- Fall Time (Typ): 3 ns
- Turn-Off Delay Time: 19 ns
- Power Dissipation-Max: 300W Tc
- Vgs(th) (Max) @ Id: 2.4V @ 250μA
- Drain-source On Resistance-Max: 0.0029Ohm
- Current - Continuous Drain (Id) @ 25°C: 200A Ta
- Input Capacitance (Ciss) (Max) @ Vds: 6620pF @ 30V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Factory Lead Time: 12 Weeks
- Number of Terminations: 3
- Pin Count: 3
- Drain to Source Voltage (Vdss): 60V
- Terminal Finish: Matte Tin (Sn)
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Length: 10.16mm
- Height: 4.7mm
- Contact Plating: Copper, Tin
- Continuous Drain Current (ID): 200A
- Turn On Delay Time: 9 ns
- Additional Feature: AVALANCHE RATED
- Rise Time: 3 ns
- Thickness: 4.58mm
- Series: NexFET?
- Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
- Rds On (Max) @ Id, Vgs: 2m Ω @ 100A, 10V
- Avalanche Energy Rating (Eas): 616 mJ
- Base Part Number: CSD18535
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Texas Instruments — Manufacturer Introduction
Texas Instruments (TI) is a multinational semiconductor company based in Texas, United States. It is renowned for its development, manufacturing, and sale of semiconductors and computer technology, primarily focusing on innovative digital signal processing and analog circuitry. In addition to its semiconductor business, TI also offers solutions in sensing and control, educational products, and digital light processing.
Headquartered in Dallas, Texas, TI has manufacturing, design, and sales offices in more than 25 countries. It is the world's largest manufacturer of digital signal processors (DSPs) and analog circuit components, with its analog and digital signal processing technologies holding a dominant position worldwide.
After successive acquisitions of Fairchild Semiconductor's manufacturing division and Chengdu Cension Semiconductor, in 2011, TI further solidified its position as a leading analog semiconductor giant by acquiring National Semiconductor for $6.5 billion.
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