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CSD19535KTT123
Inventory:8913
  • Qty Unit Price price
  • 1 $708.654 $708.654
  • 10 $701.637 $7016.37
  • 100 $694.69 $69469
  • 1000 $687.811 $687811
  • 10000 $681 $6810000

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CSD19535KTT
  • Manufacturer No:
    CSD19535KTT
  • Manufacturer:
    Texas Instruments
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    CSD19535KTT
  • SKU:
    544177
  • Description:
    MOSFET N-CH 100V 200A TO263

CSD19535KTT Details

MOSFET N-CH 100V 200A TO263

CSD19535KTT Specification Parameters

  • Part Status: Active
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • Pbfree Code: yes
  • Contact Plating: Tin
  • Number of Pins: 3
  • Terminal Form: GULL WING
  • DS Breakdown Voltage-Min: 100V
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • FET Type: N-Channel
  • Height: 4.83mm
  • Operating Temperature: -55°C~175°C TJ
  • Vgs (Max): ±20V
  • Case Connection: DRAIN
  • Continuous Drain Current (ID): 200A
  • Turn On Delay Time: 9 ns
  • Turn-Off Delay Time: 21 ns
  • Thickness: 4.44mm
  • Power Dissipation-Max: 300W Tc
  • Series: NexFET?
  • Length: 10.18mm
  • Vgs(th) (Max) @ Id: 3.4V @ 250μA
  • Current - Continuous Drain (Id) @ 25°C: 200A Ta
  • Avalanche Energy Rating (Eas): 451 mJ
  • Base Part Number: CSD19535
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Factory Lead Time: 6 Weeks
  • Lead Free: Contains Lead
  • Drain to Source Voltage (Vdss): 100V
  • Reach Compliance Code: not_compliant
  • Element Configuration: Single
  • Moisture Sensitivity Level (MSL): 2 (1 Year)
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Lifecycle Status: ACTIVE (Last Updated: 1 day ago)
  • Fall Time (Typ): 15 ns
  • Pulsed Drain Current-Max (IDM): 400A
  • Additional Feature: AVALANCHE RATED
  • Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
  • Drive Voltage (Max Rds On,Min Rds On): 6V 10V
  • Rise Time: 18ns
  • Width: 8.41mm
  • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
  • Drain-source On Resistance-Max: 0.0041Ohm
  • Rds On (Max) @ Id, Vgs: 3.4m Ω @ 100A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7930pF @ 50V

Texas Instruments — Manufacturer Introduction

Texas Instruments
Texas Instruments (TI) is a multinational semiconductor company based in Texas, United States. It is renowned for its development, manufacturing, and sale of semiconductors and computer technology, primarily focusing on innovative digital signal processing and analog circuitry. In addition to its semiconductor business, TI also offers solutions in sensing and control, educational products, and digital light processing. Headquartered in Dallas, Texas, TI has manufacturing, design, and sales offices in more than 25 countries. It is the world's largest manufacturer of digital signal processors (DSPs) and analog circuit components, with its analog and digital signal processing technologies holding a dominant position worldwide. After successive acquisitions of Fairchild Semiconductor's manufacturing division and Chengdu Cension Semiconductor, in 2011, TI further solidified its position as a leading analog semiconductor giant by acquiring National Semiconductor for $6.5 billion.

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