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- Manufacturer No：BAV19WS-E3-18
- Manufacturer：Vishay Semiconductor Diodes Division
- Category：Diodes - Rectifiers - Single
- Datasheet：BAV19WS-E3-18
- SKU：13185979
- Description：Diodes - General Purpose, Power, Switching 120 Volt 625mA
User Guide
User Guide
BAV19WS-E3-18 Details
Diodes - General Purpose, Power, Switching 120 Volt 625mA
BAV19WS-E3-18 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Pin Count: 2
- Mount: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- Contact Plating: Tin
- Terminal Position: DUAL
- Published: 2016
- Peak Reflow Temperature (Cel): 260
- Reach Compliance Code: unknown
- Max Operating Temperature: 150°C
- Peak Non-Repetitive Surge Current: 1A
- Element Configuration: Single
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Series: Automotive, AEC-Q101
- Forward Current: 250mA
- Reverse Recovery Time: 50 ns
- Output Current-Max: 0.2A
- Package / Case: SC-76, SOD-323
- Operating Temperature - Junction: 150°C Max
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
- Current - Average Rectified (Io): 250mA DC
- Current - Reverse Leakage @ Vr: 100nA @ 100V
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Min Operating Temperature: -55°C
- Factory Lead Time: 12 Weeks
- Terminal Form: GULL WING
- Max Reverse Voltage (DC): 100V
- Time@Peak Reflow Temperature-Max (s): 10
- Max Surge Current: 1A
- Diode Element Material: SILICON
- Diode Type: Standard
- Max Repetitive Reverse Voltage (Vrrm): 120V
- Average Rectified Current: 250mA
- Max Reverse Leakage Current: 100nA
- Recovery Time: 50 ns
- HTS Code: 8541.10.00.70
- JESD-30 Code: R-PDSO-G2
- Max Power Dissipation: 410mW
- Weight: 4.309128mg
- Capacitance @ Vr, F: 1.5pF @ 0V 1MHz
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