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- Manufacturer No：EGL41BHE3/96
- Manufacturer：Vishay Semiconductor Diodes Division
- Category：Diodes - Rectifiers - Single
- Datasheet：EGL41BHE3/96
- SKU：12777698
- Description：DIODE GEN PURP 100V 1A DO213AB
User Guide
User Guide
EGL41BHE3/96 Details
DIODE GEN PURP 100V 1A DO213AB
EGL41BHE3/96 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Pin Count: 2
- Mount: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Max Repetitive Reverse Voltage (Vrrm): 100V
- Min Operating Temperature: -65°C
- Terminal Finish: Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s): 40
- Output Current-Max: 1A
- Forward Current: 1A
- Element Configuration: Single
- Part Status: Discontinued
- Forward Voltage: 1V
- Case Connection: ISOLATED
- Peak Non-Repetitive Surge Current: 30A
- Peak Reverse Current: 5μA
- Reverse Recovery Time: 50 ns
- Terminal Position: END
- Peak Reflow Temperature (Cel): 250
- Series: SUPERECTIFIER?
- Current - Reverse Leakage @ Vr: 5μA @ 100V
- Capacitance @ Vr, F: 20pF @ 4V 1MHz
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Pins: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Radiation Hardening: No
- Max Reverse Voltage (DC): 100V
- Reverse Voltage: 100V
- Operating Temperature - Junction: -65°C~175°C
- Published: 2011
- Max Operating Temperature: 175°C
- Average Rectified Current: 1A
- Diode Element Material: SILICON
- Diode Type: Standard
- Factory Lead Time: 19 Weeks
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Max Surge Current: 30A
- HTS Code: 8541.10.00.80
- Subcategory: Rectifier Diodes
- Recovery Time: 50 ns
- Terminal Form: WRAP AROUND
- Package / Case: DO-213AB, MELF (Glass)
- Additional Feature: FREE WHEELING DIODE, HIGH RELIABILITY
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Base Part Number: EGL41B
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