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- Manufacturer No：ES3CHE3_A/H
- Manufacturer：Vishay Semiconductor Diodes Division
- Category：Diodes - Rectifiers - Single
- Datasheet：ES3CHE3_A/H
- SKU：13201009
- Description：DIODE GEN PURP 150V 3A DO214AB
User Guide
User Guide
ES3CHE3_A/H Details
DIODE GEN PURP 150V 3A DO214AB
ES3CHE3_A/H Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Phases: 1
- JESD-609 Code: e3
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Output Current-Max: 3A
- Published: 2012
- Voltage - DC Reverse (Vr) (Max): 150V
- Operating Temperature (Max): 150°C
- Diode Element Material: SILICON
- Diode Type: Standard
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Current-Max: 10μA
- HTS Code: 8541.10.00.80
- Non-rep Pk Forward Current-Max: 100A
- Subcategory: Rectifier Diodes
- Application: EFFICIENCY
- Additional Feature: FREE WHEELING DIODE, LOW POWER LOSS
- Current - Reverse Leakage @ Vr: 10μA @ 150V
- Base Part Number: ES3C
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Terminal Position: DUAL
- Average Rectified Current: 3A
- Terminal Finish: Matte Tin (Sn)
- Max Reverse Voltage (DC): 150V
- Reach Compliance Code: not_compliant
- Configuration: Single
- Operating Temperature - Junction: -55°C~150°C
- Factory Lead Time: 21 Weeks
- Series: Automotive, AEC-Q101
- Package / Case: DO-214AB, SMC
- Terminal Form: C BEND
- JESD-30 Code: R-PDSO-C2
- Reverse Recovery Time: 30 ns
- Capacitance @ Vr, F: 45pF @ 4V 1MHz
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
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