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- Manufacturer No：GI501-E3/54
- Manufacturer：Vishay Semiconductor Diodes Division
- Category：Diodes - Rectifiers - Single
- Datasheet：GI501-E3/54
- SKU：13103236
- Description：DIODE GEN PURP 100V 3A DO201AD
User Guide
User Guide
GI501-E3/54 Details
DIODE GEN PURP 100V 3A DO201AD
GI501-E3/54 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Pins: 2
- Mounting Type: Through Hole
- Packaging: Tape & Reel (TR)
- Number of Phases: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Application: GENERAL PURPOSE
- Average Rectified Current: 3A
- Max Reverse Voltage (DC): 100V
- Reverse Voltage: 100V
- Terminal Finish: Matte Tin (Sn)
- Published: 2009
- Factory Lead Time: 18 Weeks
- Diode Type: Standard
- HTS Code: 8541.10.00.80
- Max Surge Current: 100A
- Subcategory: Rectifier Diodes
- Forward Voltage: 1.1V
- Additional Feature: FREE WHEELING DIODE
- Package / Case: DO-201AD, Axial
- Recovery Time: 2 μs
- Length: 9.4996mm
- Capacitance @ Vr, F: 28pF @ 4V 1MHz
- Base Part Number: GI501
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Pin Count: 2
- Mount: Through Hole
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Output Current-Max: 3A
- Forward Current: 3A
- Max Repetitive Reverse Voltage (Vrrm): 100V
- Terminal Form: WIRE
- Max Operating Temperature: 150°C
- Diode Element Material: SILICON
- Element Configuration: Single
- Case Connection: ISOLATED
- Peak Reverse Current: 5μA
- Peak Non-Repetitive Surge Current: 100A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Min Operating Temperature: -50°C
- Operating Temperature - Junction: -50°C~150°C
- Reverse Recovery Time: 2 μs
- Current - Reverse Leakage @ Vr: 5μA @ 100V
- Diameter: 5.3 mm
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 9.4A
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