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- Manufacturer No：S1B-E3/5AT
- Manufacturer：Vishay Semiconductor Diodes Division
- Category：Diodes - Rectifiers - Single
- Datasheet：S1B-E3/5AT
- SKU：13322714
- Description：DIODE GEN PURP 100V 1A DO214AC
User Guide
User Guide
S1B-E3/5AT Details
DIODE GEN PURP 100V 1A DO214AC
S1B-E3/5AT Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Pins: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Peak Reflow Temperature (Cel): 260
- Max Repetitive Reverse Voltage (Vrrm): 100V
- Terminal Finish: Matte Tin (Sn)
- Max Operating Temperature: 150°C
- Output Current-Max: 1A
- Forward Current: 1A
- Factory Lead Time: 11 Weeks
- Element Configuration: Single
- Operating Temperature - Junction: -55°C~150°C
- Max Forward Surge Current (Ifsm): 30A
- Package / Case: DO-214AC, SMA
- Peak Non-Repetitive Surge Current: 40A
- Subcategory: Rectifier Diodes
- Forward Voltage: 1.1V
- Additional Feature: LOW LEAKAGE CURRENT
- Recovery Time: 1.8 μs
- Base Part Number: S1B
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Pin Count: 2
- Mount: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Terminal Position: DUAL
- Max Reverse Voltage (DC): 100V
- Reverse Voltage: 100V
- Time@Peak Reflow Temperature-Max (s): 30
- Published: 2009
- Average Rectified Current: 1A
- REACH SVHC: Unknown
- Diode Element Material: SILICON
- Diode Type: Standard
- Peak Reverse Current: 1μA
- HTS Code: 8541.10.00.80
- Max Surge Current: 40A
- Terminal Form: C BEND
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Reverse Recovery Time: 1.8 μs
- Current - Reverse Leakage @ Vr: 1μA @ 100V
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