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- Manufacturer No：US1B-E3/5AT
- Manufacturer：Vishay Semiconductor Diodes Division
- Category：Diodes - Rectifiers - Single
- Datasheet：US1B-E3/5AT
- SKU：12860386
- Description：DIODE GEN PURP 100V 1A DO214AC
User Guide
User Guide
US1B-E3/5AT Details
DIODE GEN PURP 100V 1A DO214AC
US1B-E3/5AT Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Pins: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Peak Reflow Temperature (Cel): 260
- Max Repetitive Reverse Voltage (Vrrm): 100V
- Terminal Finish: Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s): 40
- Output Current-Max: 1A
- Forward Current: 1A
- Diode Element Material: SILICON
- Diode Type: Standard
- Forward Voltage: 1V
- Peak Reverse Current: 10μA
- Peak Non-Repetitive Surge Current: 30A
- Package / Case: DO-214AC, SMA
- Subcategory: Rectifier Diodes
- Recovery Time: 50 ns
- Capacitance @ Vr, F: 15pF @ 4V 1MHz
- Current - Reverse Leakage @ Vr: 10μA @ 100V
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Pin Count: 2
- Mount: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Terminal Position: DUAL
- Max Reverse Voltage (DC): 100V
- Reverse Voltage: 100V
- Published: 2011
- Max Operating Temperature: 150°C
- Average Rectified Current: 1A
- Factory Lead Time: 11 Weeks
- Element Configuration: Single
- Operating Temperature - Junction: -55°C~150°C
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Max Surge Current: 30A
- HTS Code: 8541.10.00.80
- Terminal Form: C BEND
- Reverse Recovery Time: 50 ns
- Additional Feature: FREE WHEELING DIODE
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Base Part Number: US1B
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