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- Manufacturer No：VS-4ESH02-M3/87A
- Manufacturer：Vishay Semiconductor Diodes Division
- Category：Diodes - Rectifiers - Single
- Datasheet：VS-4ESH02-M3/87A
- SKU：13087695
- Description：DIODE GEN PURP 200V 4A TO277A
User Guide
User Guide
VS-4ESH02-M3/87A Details
DIODE GEN PURP 200V 4A TO277A
VS-4ESH02-M3/87A Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Terminal Position: DUAL
- Factory Lead Time: 10 Weeks
- Voltage - DC Reverse (Vr) (Max): 200V
- Reach Compliance Code: unknown
- Operating Temperature (Max): 175°C
- Configuration: Single
- Published: 2017
- Terminal Form: FLAT
- Average Rectified Current: 4A
- Reverse Current-Max: 2μA
- Reverse Recovery Time: 25 ns
- Series: FRED Pt?
- Non-rep Pk Forward Current-Max: 130A
- Application: HYPERFAST SOFT RECOVERY
- Additional Feature: FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Phases: 1
- JESD-609 Code: e3
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Operating Temperature - Junction: -65°C~175°C
- Max Reverse Voltage (DC): 200V
- Terminal Finish: Matte Tin (Sn)
- Diode Element Material: SILICON
- Diode Type: Standard
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Output Current-Max: 4A
- HTS Code: 8541.10.00.80
- Case Connection: CATHODE
- Package / Case: TO-277, 3-PowerDFN
- JESD-30 Code: R-PDSO-F3
- JEDEC-95 Code: TO-277A
- Current - Reverse Leakage @ Vr: 2μA @ 200V
- Voltage - Forward (Vf) (Max) @ If: 930mV @ 4A
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