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VEMT4700-GS08123
  • Manufacturer No:
    VEMT4700-GS08
  • Manufacturer:
    Vishay Semiconductor Opto Division
  • Category:
    Optical Sensors - Phototransistors
  • Datasheet:
    Get the PDF file
  • SKU:
    1627196
  • Description:
    PHOTO TRANS. SMD PLCC2 W.BASE
  • Quantity:
      • RFQ
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Inventory:8210
  • Qty Unit Price price
  • 1 $1.182 $1.182
  • 10 $1.17 $11.7
  • 100 $1.158 $115.8
  • 1000 $1.146 $1146
  • 10000 $1.134 $11340

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VEMT4700-GS08
  • Manufacturer No:
    VEMT4700-GS08
  • Manufacturer:
    Vishay Semiconductor Opto Division
  • Category:
    Optical Sensors - Phototransistors
  • Datasheet:
    VEMT4700-GS08
  • SKU:
    1627196
  • Description:
    PHOTO TRANS. SMD PLCC2 W.BASE

VEMT4700-GS08 Details

PHOTO TRANS. SMD PLCC2 W.BASE

VEMT4700-GS08 Specification Parameters

  • Part Status: Active
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Elements: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Moisture Sensitivity Level (MSL): 3 (168 Hours)
  • Max Power Dissipation: 100mW
  • Power Consumption: 100mW
  • REACH SVHC: Unknown
  • Current - Collector (Ic) (Max): 100mA
  • Shape: Round
  • Lens Style: Flat
  • Polarity: NPN
  • Width: 2.8mm
  • Collector Emitter Voltage (VCEO): 70V
  • Max Breakdown Voltage: 70V
  • On-State Current-Max: 0.05A
  • Dark Current: 200nA
  • Wavelength: 850nm
  • Operating Temperature: -40°C~100°C TA
  • Rise Time: 6μs
  • Package / Case: 4-SMD, J-Lead
  • Subcategory: Photo Transistors
  • RoHS Status: ROHS3 Compliant
  • Mount: Surface Mount
  • Number of Functions: 1
  • Pbfree Code: yes
  • Infrared Range: YES
  • Number of Pins: 3
  • Factory Lead Time: 7 Weeks
  • Power Dissipation: 100mW
  • Published: 2008
  • Configuration: Single
  • Max Collector Current: 50mA
  • Height: 1.75mm
  • Length: 3.5mm
  • Viewing Angle: 120°
  • Series: Automotive, AEC-Q100
  • Collector Emitter Breakdown Voltage: 70V
  • Size: 2.4mm
  • Orientation: Top View
  • Light Current-Nom: 0.5mA
  • Collector Emitter Saturation Voltage: 150mV
  • Fall Time (Typ): 6 μs
  • Optoelectronic Device Type: PHOTO TRANSISTOR
  • Additional Feature: HIGH SENSITIVITY

Excellent

Based on reviews

Excellent

Based on reviews

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