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- Manufacturer No：IRF634STRL
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF634STRL
- SKU：176729
- Description：MOSFET N-CH 250V 8.1A D2PAK
User Guide
User Guide
IRF634STRL Details
MOSFET N-CH 250V 8.1A D2PAK
IRF634STRL Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Lead Free: Contains Lead
- JESD-609 Code: e0
- Reach Compliance Code: unknown
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Configuration: Single
- Published: 2017
- Terminal Finish: TIN LEAD
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- JESD-30 Code: R-PSSO-G2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Current Rating: 8.1A
- Rise Time: 21ns
- Drain-source On Resistance-Max: 0.45Ohm
- Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- RoHS Status: Non-RoHS Compliant
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Pin Count: 3
- Qualification Status: Not Qualified
- Terminal Form: GULL WING
- Voltage - Rated DC: 250V
- Transistor Element Material: SILICON
- Terminal Position: SINGLE
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Continuous Drain Current (ID): 8.1A
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
- Power Dissipation-Max: 3.1W Ta 74W Tc
- Current - Continuous Drain (Id) @ 25°C: 8.1A Tc
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