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- Manufacturer No：IRF640STRL
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF640STRL
- SKU：147252
- Description：MOSFET N-CH 200V 18A D2PAK
User Guide
User Guide
IRF640STRL Details
MOSFET N-CH 200V 18A D2PAK
IRF640STRL Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- RoHS Status: Non-RoHS Compliant
- Pin Count: 4
- Lead Free: Contains Lead
- JESD-609 Code: e0
- Voltage - Rated DC: 200V
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Terminal Finish: TIN LEAD
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Continuous Drain Current (ID): 18A
- Turn-Off Delay Time: 45 ns
- Additional Feature: AVALANCHE RATED
- Fall Time (Typ): 36 ns
- Pulsed Drain Current-Max (IDM): 72A
- Current - Continuous Drain (Id) @ 25°C: 18A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Rds On (Max) @ Id, Vgs: 180m Ω @ 11A, 10V
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Part Status: Obsolete
- Number of Pins: 3
- Qualification Status: Not Qualified
- Terminal Form: GULL WING
- Drain to Source Breakdown Voltage: 200V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Published: 2017
- Peak Reflow Temperature (Cel): 240
- FET Type: N-Channel
- Height: 4.83mm
- Operating Mode: ENHANCEMENT MODE
- JESD-30 Code: R-PSSO-G2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Current Rating: 18A
- Length: 10.67mm
- Width: 9.65mm
- Turn On Delay Time: 14 ns
- Weight: 1.437803g
- Rise Time: 51 ns
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Avalanche Energy Rating (Eas): 580 mJ
- Power Dissipation-Max: 3.1W Ta 130W Tc
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