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- Manufacturer No：IRF840LPBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF840LPBF
- SKU：153075
- Description：MOSFET N-CH 500V 8A TO-262
User Guide
User Guide
IRF840LPBF Details
MOSFET N-CH 500V 8A TO-262
IRF840LPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Terminations: 3
- Pin Count: 3
- Terminal Finish: Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s): 40
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- DS Breakdown Voltage-Min: 500V
- Operating Temperature: -55°C~150°C TJ
- Continuous Drain Current (ID): 8A
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Width: 4.7mm
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Additional Feature: AVALANCHE RATED
- Length: 10.41mm
- Weight: 6.000006g
- Current - Continuous Drain (Id) @ 25°C: 8A Tc
- Turn-Off Delay Time: 49 ns
- Height: 9.01mm
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Rds On (Max) @ Id, Vgs: 850m Ω @ 4.8A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Channels: 1
- Radiation Hardening: No
- Packaging: Tube
- Number of Pins: 3
- Peak Reflow Temperature (Cel): 260
- Published: 2011
- Factory Lead Time: 11 Weeks
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 500V
- Gate to Source Voltage (Vgs): 20V
- Drain Current-Max (Abs) (ID): 8A
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Subcategory: FET General Purpose Power
- Fall Time (Typ): 20 ns
- Mount: Surface Mount, Through Hole
- Turn On Delay Time: 14 ns
- Power Dissipation: 125W
- Power Dissipation-Max: 125W Tc
- JEDEC-95 Code: TO-262AA
- Rise Time: 23ns
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Drain-source On Resistance-Max: 0.85Ohm
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