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- Manufacturer No：IRF9Z24STRLPBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF9Z24STRLPBF
- SKU：220814
- Description：MOSFET P-CH 60V 11A D2PAK
User Guide
User Guide
IRF9Z24STRLPBF Details
MOSFET P-CH 60V 11A D2PAK
IRF9Z24STRLPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Factory Lead Time: 12 Weeks
- Published: 2012
- Max Operating Temperature: 175°C
- Element Configuration: Single
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- FET Type: P-Channel
- Length: 10.67mm
- Turn On Delay Time: 13 ns
- Drain to Source Resistance: 280mOhm
- Fall Time (Typ): 29 ns
- Current - Continuous Drain (Id) @ 25°C: 11A Tc
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Rise Time: 68ns
- Input Capacitance: 570pF
- Power Dissipation-Max: 3.7W Ta 60W Tc
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Min Operating Temperature: -55°C
- Number of Pins: 3
- Drain to Source Voltage (Vdss): 60V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Height: 4.83mm
- Vgs (Max): ±20V
- Turn-Off Delay Time: 15 ns
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Width: 9.65mm
- Supplier Device Package: D2PAK
- Drain to Source Breakdown Voltage: -60V
- Weight: 1.437803g
- Power Dissipation: 3.7W
- Rds On Max: 280 mΩ
- Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V
- Continuous Drain Current (ID): -11A
- Rds On (Max) @ Id, Vgs: 280mOhm @ 6.6A, 10V
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