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- Manufacturer No：IRFBC20SPBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFBC20SPBF
- SKU：160144
- Description：MOSFET N-CH 600V 2.2A D2PAK
User Guide
User Guide
IRFBC20SPBF Details
MOSFET N-CH 600V 2.2A D2PAK
IRFBC20SPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Channels: 1
- Lead Free: Lead Free
- Factory Lead Time: 8 Weeks
- Number of Pins: 3
- REACH SVHC: Unknown
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 600V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Height: 4.83mm
- Vgs (Max): ±20V
- Turn On Delay Time: 10 ns
- Fall Time (Typ): 25 ns
- Turn-Off Delay Time: 30 ns
- Width: 9.65mm
- Weight: 1.437803g
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Resistance: 4.4Ohm
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Current - Continuous Drain (Id) @ 25°C: 2.2A Tc
- Rds On Max: 4.4 Ω
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Max Operating Temperature: 150°C
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Drain to Source Voltage (Vdss): 600V
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Published: 1997
- Threshold Voltage: 4V
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Continuous Drain Current (ID): 2.2A
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Length: 10.67mm
- Supplier Device Package: D2PAK
- Power Dissipation: 3.1W
- Rise Time: 23ns
- Drain to Source Resistance: 4.4Ohm
- Input Capacitance: 350pF
- Power Dissipation-Max: 3.1W Ta 50W Tc
- Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.3A, 10V
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