IRFBF20PBF
Vishay Siliconix
Part Status
ActiveRoHS Status
ROHS3 CompliantMoisture Sensitivity Level (MSL)
1 (Unlimited)Mounting Type
Through HoleMount
Through HoleNumber of Elements
1Number of Channels
1Radiation Hardening
NoLead Free
Lead FreeMin Operating Temperature
-55°CFactory Lead Time
8 WeeksPackaging
TubeNumber of Pins
3Published
2011Max Operating Temperature
150°CREACH SVHC
UnknownDrive Voltage (Max Rds On,Min Rds On)
10VElement Configuration
SingleGate to Source Voltage (Vgs)
20VOperating Temperature
-55°C~150°C TJFET Type
N-ChannelTechnology
MOSFET (Metal Oxide)Threshold Voltage
4VVgs (Max)
±20VPackage / Case
TO-220-3Width
4.7mmSupplier Device Package
TO-220ABDrain to Source Resistance
8OhmVgs(th) (Max) @ Id
4V @ 250μAContinuous Drain Current (ID)
1.7ATurn On Delay Time
8 nsDrain to Source Voltage (Vdss)
900VDrain to Source Breakdown Voltage
900VLength
10.41mmResistance
6.5OhmFall Time (Typ)
32 nsWeight
6.000006gNominal Vgs
4 VTurn-Off Delay Time
56 nsPower Dissipation
54WRds On Max
8 ΩGate Charge (Qg) (Max) @ Vgs
38nC @ 10VHeight
9.01mmRise Time
21nsInput Capacitance (Ciss) (Max) @ Vds
490pF @ 25VInput Capacitance
490pFPower Dissipation-Max
54W TcCurrent - Continuous Drain (Id) @ 25°C
1.7A TcRds On (Max) @ Id, Vgs
8Ohm @ 1A, 10V