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- Manufacturer No：IRFD020PBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFD020PBF
- SKU：261057
- Description：Single N-Channel 50 V 0.1 Ohms Through Hole Power Mosfet - DIP-4
User Guide
User Guide
IRFD020PBF Details
Single N-Channel 50 V 0.1 Ohms Through Hole Power Mosfet - DIP-4
IRFD020PBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Lead Free: Lead Free
- Number of Pins: 4
- Packaging: Tube
- Pin Count: 3
- Published: 2012
- REACH SVHC: Unknown
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Threshold Voltage: 4V
- Operating Mode: ENHANCEMENT MODE
- Subcategory: FET General Purpose Power
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Power Dissipation: 1.3W
- Turn-Off Delay Time: 16 ns
- Package / Case: 4-DIP (0.300, 7.62mm)
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Power Dissipation-Max: 1W Tc
- JESD-30 Code: R-PDIP-T3
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Terminal Position: DUAL
- Factory Lead Time: 8 Weeks
- Number of Terminations: 3
- Drain to Source Voltage (Vdss): 50V
- Drain to Source Breakdown Voltage: 60V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Resistance: 100mOhm
- Continuous Drain Current (ID): 2.4A
- Rise Time: 55ns
- Fall Time (Typ): 26 ns
- Turn On Delay Time: 8.7 ns
- Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
- Current - Continuous Drain (Id) @ 25°C: 2.4A Tc
- Rds On (Max) @ Id, Vgs: 100m Ω @ 1.4A, 10V
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