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- Manufacturer No：IRFI614G
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFI614G
- SKU：158624
- Description：MOSFET N-CH 250V 2.1A TO220FP
User Guide
User Guide
IRFI614G Details
MOSFET N-CH 250V 2.1A TO220FP
IRFI614G Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Published: 2016
- Voltage - Rated DC: 250V
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Drain to Source Resistance: 2Ohm
- Current Rating: 2.1A
- Turn On Delay Time: 7 ns
- Height: 9.8mm
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Rds On Max: 2 Ω
- Length: 10.63mm
- Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
- Current - Continuous Drain (Id) @ 25°C: 2.1A Tc
- Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V
- Mounting Type: Through Hole
- Number of Channels: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Pins: 3
- Lead Free: Contains Lead
- Drain to Source Voltage (Vdss): 250V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Width: 4.83mm
- Supplier Device Package: TO-220-3
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Continuous Drain Current (ID): 2.1A
- Fall Time (Typ): 7 ns
- Turn-Off Delay Time: 16 ns
- Weight: 6.000006g
- Input Capacitance: 140pF
- Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
- Rise Time: 7.6ns
- Power Dissipation-Max: 23W Tc
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