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IRFI820G123
  • Manufacturer No:
    IRFI820G
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    158125
  • Description:
    MOSFET N-CH 500V 2.1A TO220FP
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IRFI820G
  • Manufacturer No:
    IRFI820G
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFI820G
  • SKU:
    158125
  • Description:
    MOSFET N-CH 500V 2.1A TO220FP

IRFI820G Details

MOSFET N-CH 500V 2.1A TO220FP

IRFI820G Specification Parameters

  • Part Status: Active
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Radiation Hardening: No
  • Min Operating Temperature: -55°C
  • Number of Pins: 3
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Factory Lead Time: 15 Weeks
  • Gate to Source Voltage (Vgs): 20V
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Vgs (Max): ±20V
  • Supplier Device Package: TO-220-3
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Turn On Delay Time: 8 ns
  • Fall Time (Typ): 16 ns
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Weight: 6.000006g
  • Rds On Max: 3 Ω
  • Length: 10.63mm
  • Current - Continuous Drain (Id) @ 25°C: 2.1A Tc
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 1.3A, 10V
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • Number of Channels: 1
  • RoHS Status: Non-RoHS Compliant
  • Packaging: Tube
  • Max Operating Temperature: 150°C
  • Element Configuration: Single
  • Drain to Source Voltage (Vdss): 500V
  • Published: 2017
  • FET Type: N-Channel
  • Width: 4.83mm
  • Power Dissipation: 30W
  • Drain to Source Resistance: 3Ohm
  • Continuous Drain Current (ID): 2.1A
  • Height: 9.8mm
  • Input Capacitance: 360pF
  • Turn-Off Delay Time: 33 ns
  • Power Dissipation-Max: 30W Tc
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
  • Rise Time: 8.6ns

Excellent

Based on reviews

Excellent

Based on reviews

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