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- Manufacturer No：IRFP26N60LPBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFP26N60LPBF
- SKU：195624
- Description：MOSFET N-CH 600V 26A TO-247AC
User Guide
User Guide
IRFP26N60LPBF Details
MOSFET N-CH 600V 26A TO-247AC
IRFP26N60LPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Lead Free: Lead Free
- Threshold Voltage: 5V
- Packaging: Tube
- Published: 2011
- REACH SVHC: Unknown
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 600V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Package / Case: TO-247-3
- Length: 15.87mm
- Vgs(th) (Max) @ Id: 5V @ 250μA
- Width: 5.31mm
- Rise Time: 110ns
- Height: 20.7mm
- Turn On Delay Time: 31 ns
- Turn-Off Delay Time: 47 ns
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Power Dissipation: 470W
- Rds On (Max) @ Id, Vgs: 250mOhm @ 16A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Factory Lead Time: 8 Weeks
- Number of Pins: 3
- Max Operating Temperature: 150°C
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Drain to Source Voltage (Vdss): 600V
- Gate to Source Voltage (Vgs): 30V
- FET Type: N-Channel
- Vgs (Max): ±30V
- Supplier Device Package: TO-247-3
- Resistance: 250mOhm
- Continuous Drain Current (ID): 26A
- Drain to Source Resistance: 210mOhm
- Nominal Vgs: 5 V
- Fall Time (Typ): 42 ns
- Weight: 38.000013g
- Rds On Max: 250 mΩ
- Current - Continuous Drain (Id) @ 25°C: 26A Tc
- Power Dissipation-Max: 470W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 5020pF @ 25V
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