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- Manufacturer No：IRFR110TRL
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFR110TRL
- SKU：183488
- Description：MOSFET N-CH 100V 4.3A DPAK
User Guide
User Guide
IRFR110TRL Details
MOSFET N-CH 100V 4.3A DPAK
IRFR110TRL Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Channels: 1
- Min Operating Temperature: -55°C
- Number of Pins: 3
- Lead Free: Contains Lead
- Drain to Source Voltage (Vdss): 100V
- Max Operating Temperature: 150°C
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Length: 6.73mm
- Input Capacitance: 180pF
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Continuous Drain Current (ID): 4.3A
- Current Rating: 4.7A
- Weight: 1.437803g
- Rise Time: 16ns
- Fall Time (Typ): 9.4 ns
- Current - Continuous Drain (Id) @ 25°C: 4.3A Tc
- Rds On Max: 540 mΩ
- Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Published: 2016
- Voltage - Rated DC: 100V
- Drain to Source Breakdown Voltage: 100V
- REACH SVHC: Unknown
- Element Configuration: Single
- Height: 2.39mm
- FET Type: N-Channel
- Vgs (Max): ±20V
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Turn-Off Delay Time: 15 ns
- Width: 6.22mm
- Nominal Vgs: 2 V
- Supplier Device Package: D-Pak
- Turn On Delay Time: 6.9 ns
- Drain to Source Resistance: 540mOhm
- Power Dissipation-Max: 2.5W Ta 25W Tc
- Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
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