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- Manufacturer No：IRFR210PBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFR210PBF
- SKU：247035
- Description：MOSFET N-CH 200V 2.6A DPAK
User Guide
User Guide
IRFR210PBF Details
MOSFET N-CH 200V 2.6A DPAK
IRFR210PBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Channels: 1
- Lead Free: Lead Free
- Factory Lead Time: 8 Weeks
- Number of Pins: 3
- Drain to Source Voltage (Vdss): 200V
- Max Operating Temperature: 150°C
- REACH SVHC: Unknown
- Element Configuration: Single
- Height: 2.39mm
- FET Type: N-Channel
- Power Dissipation: 25W
- Vgs (Max): ±20V
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Drain to Source Resistance: 1.5Ohm
- Current Rating: 2.6A
- Width: 6.22mm
- Supplier Device Package: D-Pak
- Rise Time: 17ns
- Turn On Delay Time: 8.2 ns
- Recovery Time: 310 ns
- Power Dissipation-Max: 2.5W Ta 25W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Voltage - Rated DC: 200V
- Drain to Source Breakdown Voltage: 200V
- Published: 2006
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Threshold Voltage: 4V
- Length: 6.73mm
- Resistance: 1.5Ohm
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Continuous Drain Current (ID): 2.6A
- Turn-Off Delay Time: 14 ns
- Weight: 1.437803g
- Rds On Max: 1.5 Ω
- Input Capacitance: 140pF
- Fall Time (Typ): 8.9 ns
- Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 2.6A Tc
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