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- Manufacturer No：IRFR320
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFR320
- SKU：188784
- Description：MOSFET N-CH 400V 3.1A DPAK
User Guide
User Guide
IRFR320 Details
MOSFET N-CH 400V 3.1A DPAK
IRFR320 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Pins: 3
- Lead Free: Contains Lead
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Drain to Source Voltage (Vdss): 400V
- Height: 2.39mm
- FET Type: N-Channel
- Vgs (Max): ±20V
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Drain to Source Resistance: 1.8Ohm
- Fall Time (Typ): 13 ns
- Continuous Drain Current (ID): 3.1A
- Weight: 1.437803g
- Power Dissipation: 42W
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Power Dissipation-Max: 2.5W Ta 42W Tc
- Current - Continuous Drain (Id) @ 25°C: 3.1A Tc
- Mounting Type: Surface Mount
- Number of Channels: 1
- Min Operating Temperature: -55°C
- Packaging: Tube
- Published: 2016
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Voltage - Rated DC: 400V
- Drain to Source Breakdown Voltage: 400V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Length: 6.73mm
- Turn On Delay Time: 10 ns
- Turn-Off Delay Time: 30 ns
- Width: 6.22mm
- Current Rating: 3.1A
- Supplier Device Package: D-Pak
- Rise Time: 14ns
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance: 350pF
- Rds On Max: 1.8 Ω
- Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
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