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IRFR420PBF123
  • Manufacturer No:
    IRFR420PBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    275074
  • Description:
    Single N-Channel 500 V 3 Ohms Surface Mount Power Mosfet - TO-252
  • Quantity:
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Inventory:3068
  • Qty Unit Price price
  • 1 $1802.329 $1802.329
  • 10 $1784.484 $17844.84
  • 100 $1766.815 $176681.5
  • 1000 $1749.321 $1749321
  • 10000 $1732 $17320000

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IRFR420PBF
  • Manufacturer No:
    IRFR420PBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFR420PBF
  • SKU:
    275074
  • Description:
    Single N-Channel 500 V 3 Ohms Surface Mount Power Mosfet - TO-252

IRFR420PBF Details

Single N-Channel 500 V 3 Ohms Surface Mount Power Mosfet - TO-252

IRFR420PBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Channels: 1
  • Lead Free: Lead Free
  • Factory Lead Time: 12 Weeks
  • Number of Pins: 3
  • Published: 2014
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Voltage - Rated DC: 500V
  • Voltage: 500V
  • Gate to Source Voltage (Vgs): 20V
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Vgs (Max): ±20V
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Drain to Source Resistance: 3Ohm
  • Current: 24A
  • Continuous Drain Current (ID): 2.4A
  • Width: 6.22mm
  • Input Capacitance: 360pF
  • Supplier Device Package: D-Pak
  • Power Dissipation: 42W
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A Tc
  • Recovery Time: 520 ns
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Min Operating Temperature: -55°C
  • Packaging: Tube
  • Max Operating Temperature: 150°C
  • REACH SVHC: Unknown
  • Element Configuration: Single
  • Drain to Source Voltage (Vdss): 500V
  • Drain to Source Breakdown Voltage: 500V
  • Height: 2.39mm
  • FET Type: N-Channel
  • Threshold Voltage: 4V
  • Length: 6.73mm
  • Resistance: 3Ohm
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Current Rating: 2.4A
  • Turn On Delay Time: 8 ns
  • Fall Time (Typ): 16 ns
  • Turn-Off Delay Time: 33 ns
  • Weight: 1.437803g
  • Rds On Max: 3 Ω
  • Power Dissipation-Max: 2.5W Ta 42W Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
  • Rise Time: 8.6ns

Excellent

Based on reviews

Excellent

Based on reviews

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