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IRFR9014TRLPBF123
  • Manufacturer No:
    IRFR9014TRLPBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    236427
  • Description:
    MOSFET P-CH 60V 5.1A DPAK
  • Quantity:
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Inventory:2640
  • Qty Unit Price price
  • 1 $1.219 $1.219
  • 10 $1.206 $12.06
  • 100 $1.194 $119.4
  • 1000 $1.182 $1182
  • 10000 $1.17 $11700

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IRFR9014TRLPBF
  • Manufacturer No:
    IRFR9014TRLPBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFR9014TRLPBF
  • SKU:
    236427
  • Description:
    MOSFET P-CH 60V 5.1A DPAK

IRFR9014TRLPBF Details

MOSFET P-CH 60V 5.1A DPAK

IRFR9014TRLPBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Factory Lead Time: 8 Weeks
  • Drain to Source Voltage (Vdss): 60V
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Gate to Source Voltage (Vgs): 20V
  • Height: 2.39mm
  • Technology: MOSFET (Metal Oxide)
  • Input Capacitance: 270pF
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • FET Type: P-Channel
  • Drain to Source Resistance: 500mOhm
  • Turn On Delay Time: 11 ns
  • Drain to Source Breakdown Voltage: -60V
  • Weight: 1.437803g
  • Rds On Max: 500 mΩ
  • Turn-Off Delay Time: 9.6 ns
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A Tc
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Min Operating Temperature: -55°C
  • Number of Pins: 3
  • Max Operating Temperature: 150°C
  • Element Configuration: Single
  • Published: 2017
  • Operating Temperature: -55°C~150°C TJ
  • Vgs (Max): ±20V
  • Length: 6.73mm
  • Power Dissipation: 2.5W
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Width: 6.22mm
  • Continuous Drain Current (ID): 5.1A
  • Supplier Device Package: D-Pak
  • Fall Time (Typ): 31 ns
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Power Dissipation-Max: 2.5W Ta 25W Tc
  • Rise Time: 63ns
  • Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V

Excellent

Based on reviews

Excellent

Based on reviews

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