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- Manufacturer No：IRFR9210TR
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFR9210TR
- SKU：209475
- Description：MOSFET P-CH 200V 1.9A DPAK
User Guide
User Guide
IRFR9210TR Details
MOSFET P-CH 200V 1.9A DPAK
IRFR9210TR Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Lead Free: Contains Lead
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Published: 2017
- Operating Temperature: -55°C~150°C TJ
- Vgs (Max): ±20V
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Resistance: 3Ohm
- FET Type: P-Channel
- Turn On Delay Time: 8 ns
- Width: 6.22mm
- Rise Time: 12ns
- Supplier Device Package: D-Pak
- Rds On Max: 3 Ω
- Voltage - Rated DC: -200V
- Input Capacitance: 170pF
- Current - Continuous Drain (Id) @ 25°C: 1.9A Tc
- Current Rating: -1.9A
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Min Operating Temperature: -55°C
- Number of Pins: 3
- Drain to Source Voltage (Vdss): 200V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Height: 2.39mm
- Technology: MOSFET (Metal Oxide)
- Length: 6.73mm
- Power Dissipation: 2.5W
- Drain to Source Resistance: 3Ohm
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Continuous Drain Current (ID): 1.9A
- Fall Time (Typ): 13 ns
- Turn-Off Delay Time: 11 ns
- Weight: 1.437803g
- Drain to Source Breakdown Voltage: -200V
- Power Dissipation-Max: 2.5W Ta 25W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V
- Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
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