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- Manufacturer No：IRFU014PBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFU014PBF
- SKU：189818
- Description：Trans MOSFET N-CH 60V 7.7A 3-Pin(3+Tab) IPAK
User Guide
User Guide
IRFU014PBF Details
Trans MOSFET N-CH 60V 7.7A 3-Pin(3+Tab) IPAK
IRFU014PBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Packaging: Tube
- Number of Pins: 3
- Peak Reflow Temperature (Cel): 260
- DS Breakdown Voltage-Min: 60V
- Time@Peak Reflow Temperature-Max (s): 40
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Width: 2.39mm
- FET Type: N-Channel
- Threshold Voltage: 4V
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- Turn On Delay Time: 10 ns
- Power Dissipation: 2.5W
- Resistance: 200mOhm
- Height: 6.22mm
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Continuous Drain Current (ID): 7.7A
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
- Rds On (Max) @ Id, Vgs: 200m Ω @ 4.6A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Factory Lead Time: 8 Weeks
- Number of Terminations: 3
- Pin Count: 3
- Drain to Source Voltage (Vdss): 60V
- Published: 2011
- REACH SVHC: Unknown
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Length: 6.73mm
- Rise Time: 50 ns
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Lead Length: 9.65mm
- Turn-Off Delay Time: 13 ns
- Fall Time (Typ): 19 ns
- Weight: 329.988449mg
- Power Dissipation-Max: 2.5W Ta 25W Tc
- Current - Continuous Drain (Id) @ 25°C: 7.7A Tc
- Avalanche Energy Rating (Eas): 27.4 mJ
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