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- Manufacturer No：IRFZ24STRLPBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFZ24STRLPBF
- SKU：290373
- Description：MOSFET N-CH 60V 17A D2PAK
User Guide
User Guide
IRFZ24STRLPBF Details
MOSFET N-CH 60V 17A D2PAK
IRFZ24STRLPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Radiation Hardening: No
- Number of Pins: 3
- Terminal Form: GULL WING
- Drain to Source Voltage (Vdss): 60V
- Time@Peak Reflow Temperature-Max (s): 30
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Turn-Off Delay Time: 25 ns
- Continuous Drain Current (ID): 17A
- HTS Code: 8541.29.00.95
- Fall Time (Typ): 42 ns
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 17A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
- Rds On (Max) @ Id, Vgs: 100m Ω @ 10A, 10V
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- Pin Count: 4
- Published: 2016
- Peak Reflow Temperature (Cel): 260
- DS Breakdown Voltage-Min: 60V
- Factory Lead Time: 11 Weeks
- Transistor Element Material: SILICON
- Terminal Position: SINGLE
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- JESD-30 Code: R-PSSO-G2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Turn On Delay Time: 13 ns
- Drain-source On Resistance-Max: 0.1Ohm
- Pulsed Drain Current-Max (IDM): 68A
- Rise Time: 58 ns
- Avalanche Energy Rating (Eas): 100 mJ
- Power Dissipation-Max: 3.7W Ta 60W Tc
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