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IRFZ30PBF123
  • Manufacturer No:
    IRFZ30PBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    226980
  • Description:
    MOSFET N-CH 50V 30A TO-220AB
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IRFZ30PBF
  • Manufacturer No:
    IRFZ30PBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFZ30PBF
  • SKU:
    226980
  • Description:
    MOSFET N-CH 50V 30A TO-220AB

IRFZ30PBF Details

MOSFET N-CH 50V 30A TO-220AB

IRFZ30PBF Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Radiation Hardening: No
  • Min Operating Temperature: -55°C
  • Packaging: Tube
  • Drain to Source Voltage (Vdss): 50V
  • Max Operating Temperature: 150°C
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Gate to Source Voltage (Vgs): 20V
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Continuous Drain Current (ID): 30A
  • Vgs (Max): ±20V
  • Supplier Device Package: TO-220AB
  • Drain to Source Resistance: 50mOhm
  • Turn On Delay Time: 12 ns
  • Turn-Off Delay Time: 23 ns
  • Current - Continuous Drain (Id) @ 25°C: 30A Tc
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • Lead Free: Lead Free
  • Part Status: Obsolete
  • Number of Pins: 3
  • Drain to Source Breakdown Voltage: 50V
  • REACH SVHC: Unknown
  • Element Configuration: Single
  • Power Dissipation: 75W
  • Published: 2000
  • Technology: MOSFET (Metal Oxide)
  • Threshold Voltage: 4V
  • Package / Case: TO-220-3
  • Resistance: 50mOhm
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Fall Time (Typ): 16 ns
  • Input Capacitance: 1.6nF
  • Rds On Max: 50 mΩ
  • Rise Time: 16ns
  • Power Dissipation-Max: 74W Tc

Excellent

Based on reviews

Excellent

Based on reviews

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