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- Manufacturer No：IRLL014PBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRLL014PBF
- SKU：263697
- Description：MOSFET N-CH 60V 2.7A SOT223
User Guide
User Guide
IRLL014PBF Details
MOSFET N-CH 60V 2.7A SOT223
IRLL014PBF Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Lead Free: Lead Free
- Part Status: Obsolete
- Number of Pins: 3
- Drain to Source Voltage (Vdss): 60V
- Max Operating Temperature: 150°C
- REACH SVHC: Unknown
- Element Configuration: Single
- Threshold Voltage: 2V
- FET Type: N-Channel
- Height: 1.8mm
- Continuous Drain Current (ID): 2.7A
- Resistance: 200mOhm
- Width: 3.7mm
- Turn-Off Delay Time: 17 ns
- Fall Time (Typ): 26 ns
- Supplier Device Package: SOT-223
- Rds On Max: 200 mΩ
- Turn On Delay Time: 9.3 ns
- Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
- Weight: 250.212891mg
- Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Channels: 1
- Min Operating Temperature: -55°C
- Packaging: Tube
- Voltage - Rated DC: 60V
- Drain to Source Breakdown Voltage: 60V
- Published: 2008
- Gate to Source Voltage (Vgs): 10V
- Power Dissipation: 2W
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Current Rating: 2.7A
- Length: 6.7mm
- Drain to Source Resistance: 200mOhm
- Package / Case: TO-261-4, TO-261AA
- Vgs(th) (Max) @ Id: 2V @ 250μA
- Vgs (Max): ±10V
- Rise Time: 110ns
- Input Capacitance: 400pF
- Drive Voltage (Max Rds On,Min Rds On): 4V 5V
- Current - Continuous Drain (Id) @ 25°C: 2.7A Tc
- Power Dissipation-Max: 2W Ta 3.1W Tc
- Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 5V
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