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- Manufacturer No：IRLL110PBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRLL110PBF
- SKU：270931
- Description：MOSFET N-CH 100V 1.5A SOT223
User Guide
User Guide
IRLL110PBF Details
MOSFET N-CH 100V 1.5A SOT223
IRLL110PBF Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Voltage - Rated DC: 100V
- Drain to Source Breakdown Voltage: 100V
- Max Operating Temperature: 150°C
- REACH SVHC: Unknown
- Element Configuration: Single
- Threshold Voltage: 2V
- Current Rating: 1.5A
- FET Type: N-Channel
- Height: 1.8mm
- Width: 3.7mm
- Fall Time (Typ): 18 ns
- Vgs(th) (Max) @ Id: 2V @ 250μA
- Supplier Device Package: SOT-223
- Turn On Delay Time: 9.3 ns
- Resistance: 540mOhm
- Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
- Current - Continuous Drain (Id) @ 25°C: 1.5A Tc
- Rds On Max: 540 mΩ
- Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Channels: 1
- Lead Free: Lead Free
- Part Status: Obsolete
- Number of Pins: 3
- Drain to Source Voltage (Vdss): 100V
- Published: 2015
- Max Junction Temperature (Tj): 150°C
- Gate to Source Voltage (Vgs): 10V
- Power Dissipation: 2W
- Operating Temperature: -55°C~150°C TJ
- Continuous Drain Current (ID): 1.5A
- Technology: MOSFET (Metal Oxide)
- Length: 6.7mm
- Package / Case: TO-261-4, TO-261AA
- Turn-Off Delay Time: 16 ns
- Vgs (Max): ±10V
- Input Capacitance: 250pF
- Drain to Source Resistance: 540mOhm
- Drive Voltage (Max Rds On,Min Rds On): 4V 5V
- Rise Time: 47ns
- Weight: 250.212891mg
- Power Dissipation-Max: 2W Ta 3.1W Tc
- Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 5V
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