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- Manufacturer No：SI1012X-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI1012X-T1-GE3
- SKU：252475
- Description：MOSFET N-CH 20V 500MA SC89-3
User Guide
User Guide
SI1012X-T1-GE3 Details
MOSFET N-CH 20V 500MA SC89-3
SI1012X-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Terminal Position: DUAL
- Number of Pins: 3
- Published: 2012
- Power Dissipation: 250mW
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 20V
- Height: 800μm
- Terminal Form: FLAT
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Drain Current-Max (Abs) (ID): 0.5A
- Length: 1.7mm
- Turn-Off Delay Time: 25 ns
- Fall Time (Typ): 5 ns
- Threshold Voltage: 900mV
- Series: TrenchFET?
- Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250μA
- Current - Continuous Drain (Id) @ 25°C: 500mA Ta
- Power Dissipation-Max: 250mW Ta
- Rds On (Max) @ Id, Vgs: 700m Ω @ 600mA, 4.5V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Terminations: 3
- Pin Count: 3
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- REACH SVHC: Unknown
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 6V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Continuous Drain Current (ID): 600mA
- Subcategory: FET General Purpose Power
- Width: 950μm
- Turn On Delay Time: 5 ns
- Rise Time: 5 ns
- Resistance: 700mOhm
- Weight: 29.993795mg
- Package / Case: SC-89, SOT-490
- Additional Feature: LOW THRESHOLD
- Vgs (Max): ±6V
- Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
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