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SI1054X-T1-GE3123
  • Manufacturer No:
    SI1054X-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    227435
  • Description:
    MOSFET N-CH 12V 1.32A SC89-6
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  • 10 $0.2 $2
  • 100 $0.198 $19.8
  • 1000 $0.196 $196
  • 10000 $0.1937 $1937

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SI1054X-T1-GE3
  • Manufacturer No:
    SI1054X-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SI1054X-T1-GE3
  • SKU:
    227435
  • Description:
    MOSFET N-CH 12V 1.32A SC89-6

SI1054X-T1-GE3 Details

MOSFET N-CH 12V 1.32A SC89-6

SI1054X-T1-GE3 Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Radiation Hardening: No
  • Part Status: Obsolete
  • Number of Pins: 6
  • Drain to Source Breakdown Voltage: 12V
  • Element Configuration: Single
  • FET Type: N-Channel
  • Gate to Source Voltage (Vgs): 8V
  • Series: TrenchFET?
  • Package / Case: SOT-563, SOT-666
  • Vgs (Max): ±8V
  • Drain to Source Resistance: 95mOhm
  • Rise Time: 13ns
  • Rds On Max: 95 mΩ
  • Supplier Device Package: SC-89-6
  • Power Dissipation: 236mW
  • Gate Charge (Qg) (Max) @ Vgs: 8.57nC @ 5V
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Min Operating Temperature: -55°C
  • Published: 2013
  • Drain to Source Voltage (Vdss): 12V
  • Max Operating Temperature: 150°C
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Fall Time (Typ): 13 ns
  • Vgs(th) (Max) @ Id: 1V @ 250μA
  • Turn On Delay Time: 5.5 ns
  • Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
  • Turn-Off Delay Time: 37 ns
  • Continuous Drain Current (ID): 1.32A
  • Input Capacitance: 480pF
  • Power Dissipation-Max: 236mW Ta
  • Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 6V
  • Rds On (Max) @ Id, Vgs: 95mOhm @ 1.32A, 4.5V

Excellent

Based on reviews

Excellent

Based on reviews

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