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SI1302DL-T1-GE3123
  • Manufacturer No:
    SI1302DL-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    280501
  • Description:
    MOSFET N-CH 30V 600MA SC-70-3
  • Quantity:
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Inventory:22386
  • Qty Unit Price price
  • 1 $69.723 $69.723
  • 10 $69.032 $690.32
  • 100 $68.348 $6834.8
  • 1000 $67.671 $67671
  • 10000 $67 $670000

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SI1302DL-T1-GE3
  • Manufacturer No:
    SI1302DL-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SI1302DL-T1-GE3
  • SKU:
    280501
  • Description:
    MOSFET N-CH 30V 600MA SC-70-3

SI1302DL-T1-GE3 Details

MOSFET N-CH 30V 600MA SC-70-3

SI1302DL-T1-GE3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Terminal Position: DUAL
  • Number of Pins: 3
  • Published: 2016
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 40
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Vgs (Max): ±20V
  • Subcategory: FET General Purpose Power
  • Rise Time: 8ns
  • Package / Case: SC-70, SOT-323
  • Turn On Delay Time: 5 ns
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Drain-source On Resistance-Max: 0.48Ohm
  • Weight: 6.208546mg
  • Power Dissipation-Max: 280mW Ta
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Number of Terminations: 3
  • Pin Count: 3
  • Terminal Form: GULL WING
  • Terminal Finish: Matte Tin (Sn)
  • Factory Lead Time: 14 Weeks
  • Element Configuration: Single
  • Drain to Source Voltage (Vdss): 30V
  • FET Type: N-Channel
  • Operating Mode: ENHANCEMENT MODE
  • Continuous Drain Current (ID): 600mA
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Drain Current-Max (Abs) (ID): 0.6A
  • Turn-Off Delay Time: 8 ns
  • Fall Time (Typ): 7 ns
  • Series: TrenchFET?
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
  • Current - Continuous Drain (Id) @ 25°C: 600mA Ta
  • Rds On (Max) @ Id, Vgs: 480m Ω @ 600mA, 10V

Excellent

Based on reviews

Excellent

Based on reviews

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