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- Manufacturer No：SI1304BDL-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI1304BDL-T1-E3
- SKU：224809
- Description：MOSFET N-CH 30V 0.9A SOT323-3
User Guide
User Guide
SI1304BDL-T1-E3 Details
MOSFET N-CH 30V 0.9A SOT323-3
SI1304BDL-T1-E3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Terminal Position: DUAL
- Number of Pins: 3
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Gate to Source Voltage (Vgs): 12V
- Published: 2009
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Height: 990.6μm
- Threshold Voltage: 1.3V
- Continuous Drain Current (ID): 900mA
- Rise Time: 30 ns
- Turn-Off Delay Time: 5 ns
- Series: TrenchFET?
- Vgs (Max): ±12V
- Drive Voltage (Max Rds On,Min Rds On): 2.5V 4.5V
- Power Dissipation: 340mW
- Vgs(th) (Max) @ Id: 1.3V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V
- Rds On (Max) @ Id, Vgs: 270m Ω @ 900mA, 4.5V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Part Status: Obsolete
- Number of Terminations: 3
- Pin Count: 3
- REACH SVHC: No SVHC
- Terminal Finish: Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s): 40
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 30V
- FET Type: N-Channel
- Operating Mode: ENHANCEMENT MODE
- Subcategory: FET General Purpose Power
- Turn On Delay Time: 10 ns
- Fall Time (Typ): 30 ns
- Package / Case: SC-70, SOT-323
- Length: 2.1844mm
- Width: 1.3462mm
- Resistance: 270mOhm
- Drain Current-Max (Abs) (ID): 0.85A
- Nominal Vgs: 1.3 V
- Current - Continuous Drain (Id) @ 25°C: 900mA Tc
- Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 15V
- Power Dissipation-Max: 340mW Ta 370mW Tc
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