SI1403CDL-T1-GE3Vishay Siliconix
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    SI1403CDL-T1-GE3123
    • Manufacturer No：
      SI1403CDL-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      281922
    • Description：
      VISHAY - SI1403CDL-T1-GE3 - MOSFET, P-KANAL, 20V, 2.1A, SC-70-6
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    SI1403CDL-T1-GE3
    • Manufacturer No：
      SI1403CDL-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI1403CDL-T1-GE3
    • SKU：
      281922
    • Description：
      VISHAY - SI1403CDL-T1-GE3 - MOSFET, P-KANAL, 20V, 2.1A, SC-70-6

    User Guide

    User Guide

    SI1403CDL-T1-GE3 Details

    VISHAY - SI1403CDL-T1-GE3 - MOSFET, P-KANAL, 20V, 2.1A, SC-70-6

    SI1403CDL-T1-GE3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Terminal Position: DUAL
    • Number of Pins: 6
    • Terminal Form: GULL WING
    • Terminal Finish: Matte Tin (Sn)
    • Published: 2010
    • Drain to Source Breakdown Voltage: 20V
    • Operating Temperature: -55°C~150°C TJ
    • Transistor Application: SWITCHING
    • Height: 900μm
    • Subcategory: Other Transistors
    • FET Type: P-Channel
    • Continuous Drain Current (ID): 2.1A
    • Threshold Voltage: 600mV
    • Turn On Delay Time: 18 ns
    • Series: TrenchFET?
    • Rise Time: 26 ns
    • Drive Voltage (Max Rds On,Min Rds On): 2.5V 4.5V
    • Weight: 7.512624mg
    • Input Capacitance (Ciss) (Max) @ Vds: 281pF @ 10V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Part Status: Obsolete
    • Number of Terminations: 6
    • Pin Count: 6
    • REACH SVHC: No SVHC
    • Gate to Source Voltage (Vgs): 12V
    • Transistor Element Material: SILICON
    • Width: 1.25mm
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Power Dissipation: 600mW
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Turn-Off Delay Time: 30 ns
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Length: 2.05mm
    • Fall Time (Typ): 18 ns
    • Vgs (Max): ±12V
    • Vgs(th) (Max) @ Id: 1.5V @ 250μA
    • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
    • Current - Continuous Drain (Id) @ 25°C: 2.1A Tc
    • Rds On (Max) @ Id, Vgs: 140m Ω @ 1.6A, 4.5V
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