SI1406DH-T1-E3Vishay Siliconix
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    SI1406DH-T1-E3123
    • Manufacturer No：
      SI1406DH-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      273609
    • Description：
      MOSFET N-CH 20V 3.1A SC70-6
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    SI1406DH-T1-E3
    • Manufacturer No：
      SI1406DH-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI1406DH-T1-E3
    • SKU：
      273609
    • Description：
      MOSFET N-CH 20V 3.1A SC70-6

    User Guide

    User Guide

    SI1406DH-T1-E3 Details

    MOSFET N-CH 20V 3.1A SC70-6

    SI1406DH-T1-E3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Terminal Position: DUAL
    • Number of Pins: 6
    • Terminal Form: GULL WING
    • Terminal Finish: Matte Tin (Sn)
    • Time@Peak Reflow Temperature-Max (s): 40
    • REACH SVHC: Unknown
    • Element Configuration: Single
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Series: TrenchFET?
    • Turn On Delay Time: 27 ns
    • Subcategory: FET General Purpose Powers
    • Fall Time (Typ): 29 ns
    • Power Dissipation-Max: 1W Ta
    • Rise Time: 47 ns
    • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
    • Input Capacitance: 155pF
    • Rds On (Max) @ Id, Vgs: 65m Ω @ 3.9A, 4.5V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Part Status: Obsolete
    • Number of Terminations: 6
    • Pin Count: 6
    • Peak Reflow Temperature (Cel): 260
    • Power Dissipation: 1W
    • Published: 2008
    • Transistor Element Material: SILICON
    • Drain to Source Breakdown Voltage: 20V
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Gate to Source Voltage (Vgs): 8V
    • Continuous Drain Current (ID): 3.1A
    • Vgs (Max): ±8V
    • Resistance: 65mOhm
    • Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
    • Threshold Voltage: 450mV
    • Turn-Off Delay Time: 54 ns
    • Vgs(th) (Max) @ Id: 1.2V @ 250μA
    • Current - Continuous Drain (Id) @ 25°C: 3.1A Ta
    • Nominal Vgs: 450 mV
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