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- Manufacturer No：SI1441EDH-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI1441EDH-T1-GE3
- SKU：265063
- Description：MOSFET -20V 41mOhm@4.5V 4A P-Ch G-III
User Guide
User Guide
SI1441EDH-T1-GE3 Details
MOSFET -20V 41mOhm@4.5V 4A P-Ch G-III
SI1441EDH-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 6
- Pin Count: 6
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- REACH SVHC: Unknown
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 20V
- Drain Current-Max (Abs) (ID): 4A
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- FET Type: P-Channel
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Series: TrenchFET?
- Vgs (Max): ±10V
- Terminal Finish: PURE MATTE TIN
- Weight: 7.512624mg
- Power Dissipation-Max: 2.8W Tc
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Terminal Position: DUAL
- Number of Pins: 6
- Terminal Form: GULL WING
- Published: 2015
- Factory Lead Time: 14 Weeks
- Gate to Source Voltage (Vgs): 10V
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Continuous Drain Current (ID): 4A
- Transistor Application: SWITCHING
- Subcategory: Other Transistors
- Power Dissipation: 1.6W
- Drain to Source Breakdown Voltage: -20V
- Vgs(th) (Max) @ Id: 1V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
- Current - Continuous Drain (Id) @ 25°C: 4A Tc
- Nominal Vgs: -400 mV
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 8V
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