SI1903DL-T1-E3Vishay Siliconix
    Add to like
    Add to project list
    SI1903DL-T1-E3123
    • Manufacturer No：
      SI1903DL-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      Get the PDF file
    • SKU：
      284327
    • Description：
      MOSFET 20V 0.44A
    • Quantity：
        • RFQ
        • Add To Cart
    • Material flow:
    • Payment:
    Inventory:0
    • Qty Unit Price price

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    SI1903DL-T1-E3
    • Manufacturer No：
      SI1903DL-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      SI1903DL-T1-E3
    • SKU：
      284327
    • Description：
      MOSFET 20V 0.44A

    User Guide

    User Guide

    SI1903DL-T1-E3 Details

    MOSFET 20V 0.44A

    SI1903DL-T1-E3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Terminations: 6
    • Pin Count: 6
    • REACH SVHC: No SVHC
    • Gate to Source Voltage (Vgs): 12V
    • Transistor Element Material: SILICON
    • Operating Temperature: -55°C~150°C TJ
    • Subcategory: Other Transistors
    • Fall Time (Typ): 20 ns
    • Turn On Delay Time: 7.5 ns
    • FET Feature: Logic Level Gate
    • Turn-Off Delay Time: 8.5 ns
    • Current - Continuous Drain (Id) @ 25°C: 410mA
    • FET Type: 2 P-Channel (Dual)
    • Power Dissipation: 270mW
    • Drain Current-Max (Abs) (ID): 0.41A
    • Nominal Vgs: -1.5 V
    • Feedback Cap-Max (Crss): 888 pF
    • Base Part Number: SI1903
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Part Status: Obsolete
    • Number of Pins: 6
    • Terminal Form: GULL WING
    • Terminal Finish: Matte Tin (Sn)
    • Element Configuration: Dual
    • Drain to Source Breakdown Voltage: 20V
    • Operating Mode: ENHANCEMENT MODE
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Rise Time: 20ns
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Series: TrenchFET?
    • Continuous Drain Current (ID): 440mA
    • Vgs(th) (Max) @ Id: 1.5V @ 250μA
    • Max Power Dissipation: 270mW
    • Threshold Voltage: -1.5V
    • Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
    • Resistance: 995mOhm
    • Rds On (Max) @ Id, Vgs: 995m Ω @ 410mA, 4.5V
    Search for similar products

    SI1903DL-T1-E3 Similar Products

    The four parts on the right have similar specifications to Vishay Siliconix & SI1903DL-T1-E3

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via