SI1970DH-T1-E3Vishay Siliconix
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    SI1970DH-T1-E3123
    • Manufacturer No：
      SI1970DH-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      Get the PDF file
    • SKU：
      270002
    • Description：
      TrenchFET® Tape & Reel (TR) Surface Mount 2N-Channel (Dual) Mosfet Array 3.8nC @ 10V 1.3A 1.25W 10ns
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    SI1970DH-T1-E3
    • Manufacturer No：
      SI1970DH-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      SI1970DH-T1-E3
    • SKU：
      270002
    • Description：
      TrenchFET® Tape & Reel (TR) Surface Mount 2N-Channel (Dual) Mosfet Array 3.8nC @ 10V 1.3A 1.25W 10ns

    User Guide

    User Guide

    SI1970DH-T1-E3 Details

    TrenchFET® Tape & Reel (TR) Surface Mount 2N-Channel (Dual) Mosfet Array 3.8nC @ 10V 1.3A 1.25W 10ns

    SI1970DH-T1-E3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Published: 2013
    • Number of Pins: 6
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 40
    • REACH SVHC: Unknown
    • Drain to Source Voltage (Vdss): 30V
    • Operating Temperature: -55°C~150°C TJ
    • Terminal Form: FLAT
    • Operating Mode: ENHANCEMENT MODE
    • Subcategory: FET General Purpose Power
    • Fall Time (Typ): 10 ns
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Max Power Dissipation: 1.25W
    • FET Feature: Logic Level Gate
    • FET Type: 2 N-Channel (Dual)
    • Nominal Vgs: 1.6 V
    • Vgs(th) (Max) @ Id: 1.6V @ 250μA
    • Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 15V
    • Base Part Number: SI1970
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Part Status: Obsolete
    • Number of Terminations: 6
    • Pin Count: 6
    • Gate to Source Voltage (Vgs): 12V
    • Element Configuration: Dual
    • Transistor Element Material: SILICON
    • DS Breakdown Voltage-Min: 30V
    • Terminal Finish: MATTE TIN
    • Transistor Application: SWITCHING
    • Rise Time: 10ns
    • Threshold Voltage: 1.6V
    • Turn-Off Delay Time: 10 ns
    • Continuous Drain Current (ID): 1.3A
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Series: TrenchFET?
    • Power Dissipation: 740mW
    • Resistance: 225mOhm
    • Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 10V
    • Rds On (Max) @ Id, Vgs: 225m Ω @ 1.2A, 4.5V
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