Add to like
Add to project list
123
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:51000
- Qty Unit Price price
- 1 $0.228 $0.228
- 10 $0.225 $2.25
- 100 $0.222 $22.2
- 1000 $0.219 $219
- 10000 $0.2159 $2159
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：SI2316BDS-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI2316BDS-T1-GE3
- SKU：278727
- Description：MOSFET 30V 4.5A 1.66W 50mohm @ 10V
User Guide
User Guide
SI2316BDS-T1-GE3 Details
MOSFET 30V 4.5A 1.66W 50mohm @ 10V
SI2316BDS-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 3
- Pin Count: 3
- Terminal Form: GULL WING
- Terminal Finish: Matte Tin (Sn)
- Threshold Voltage: 3V
- REACH SVHC: Unknown
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 30V
- FET Type: N-Channel
- Width: 1.4mm
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Resistance: 50mOhm
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Series: TrenchFET?
- Rise Time: 65 ns
- Subcategory: FET General Purpose Powers
- Current - Continuous Drain (Id) @ 25°C: 4.5A Tc
- Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 10V
- Rds On (Max) @ Id, Vgs: 50m Ω @ 3.9A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Terminal Position: DUAL
- Number of Pins: 3
- Published: 2016
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Continuous Drain Current (ID): 4.5A
- Turn On Delay Time: 20 ns
- Height: 1.02mm
- Turn-Off Delay Time: 11 ns
- Fall Time (Typ): 65 ns
- Length: 3.04mm
- Weight: 1.437803g
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 15V
- Power Dissipation-Max: 1.25W Ta 1.66W Tc
Search for similar products
SI2316BDS-T1-GE3 Similar Products
The four parts on the right have similar specifications to Vishay Siliconix & SI2316BDS-T1-GE3
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
