Add to like
Add to project list
123
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:16794
- Qty Unit Price price
- 1 $581.7 $581.7
- 10 $575.94 $5759.4
- 100 $570.237 $57023.7
- 1000 $564.591 $564591
- 10000 $559 $5590000
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：SI3417DV-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI3417DV-T1-GE3
- SKU：270007
- Description：MOSFET -30V .0252ohm@-10V -8A P-Ch T-FET
User Guide
User Guide
SI3417DV-T1-GE3 Details
MOSFET -30V .0252ohm@-10V -8A P-Ch T-FET
SI3417DV-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Terminal Position: DUAL
- Number of Pins: 6
- Terminal Finish: Matte Tin (Sn)
- Published: 2014
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Continuous Drain Current (ID): 8A
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Rise Time: 35 ns
- Turn-Off Delay Time: 40 ns
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Series: TrenchFET?
- Turn On Delay Time: 42 ns
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
- Drain-source On Resistance-Max: 0.0252Ohm
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- JESD-609 Code: e3
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 6
- Terminal Form: GULL WING
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Power Dissipation: 2W
- Drain to Source Voltage (Vdss): 30V
- Drain Current-Max (Abs) (ID): 8A
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- FET Type: P-Channel
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Fall Time (Typ): 16 ns
- Drain to Source Breakdown Voltage: -30V
- Weight: 19.986414mg
- Current - Continuous Drain (Id) @ 25°C: 8A Ta
- Power Dissipation-Max: 2W Ta 4.2W Tc
- Rds On (Max) @ Id, Vgs: 25.2m Ω @ 7.3A, 10V
Search for similar products
SI3417DV-T1-GE3 Similar Products
The four parts on the right have similar specifications to Vishay Siliconix & SI3417DV-T1-GE3
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
