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- Manufacturer No：SI3464DV-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI3464DV-T1-GE3
- SKU：250209
- Description：MOSFET N-CH 20V 8A 6-TSOP
User Guide
User Guide
SI3464DV-T1-GE3 Details
MOSFET N-CH 20V 8A 6-TSOP
SI3464DV-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Terminal Position: DUAL
- Number of Pins: 6
- Terminal Form: GULL WING
- Terminal Finish: Matte Tin (Sn)
- Factory Lead Time: 14 Weeks
- REACH SVHC: Unknown
- Power Dissipation: 2W
- Operating Temperature: -55°C~150°C TJ
- Continuous Drain Current (ID): 8A
- Technology: MOSFET (Metal Oxide)
- Height: 1.1mm
- Gate to Source Voltage (Vgs): 8V
- Width: 1.65mm
- Rise Time: 12 ns
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Turn-Off Delay Time: 22 ns
- Vgs(th) (Max) @ Id: 1V @ 250μA
- Subcategory: FET General Purpose Powers
- Current - Continuous Drain (Id) @ 25°C: 8A Tc
- Drain-source On Resistance-Max: 0.024Ohm
- Nominal Vgs: 450 mV
- Input Capacitance (Ciss) (Max) @ Vds: 1065pF @ 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Terminations: 6
- Pin Count: 6
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Published: 2014
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 20V
- Drain Current-Max (Abs) (ID): 8A
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- Length: 3.05mm
- Fall Time (Typ): 8 ns
- Turn On Delay Time: 3 ns
- Series: TrenchFET?
- Vgs (Max): ±8V
- Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
- Weight: 19.986414mg
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
- Rds On (Max) @ Id, Vgs: 24m Ω @ 7.5A, 4.5V
- Power Dissipation-Max: 2W Ta 3.6W Tc
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