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- Manufacturer No：SI3483CDV-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI3483CDV-T1-E3
- SKU：335939
- Description：MOSFET 30V 8.0A 4.2W 34mohm @ 10V
User Guide
User Guide
SI3483CDV-T1-E3 Details
MOSFET 30V 8.0A 4.2W 34mohm @ 10V
SI3483CDV-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Terminal Position: DUAL
- Number of Terminations: 6
- Pin Count: 6
- REACH SVHC: No SVHC
- Time@Peak Reflow Temperature-Max (s): 30
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Height: 1mm
- Drain to Source Voltage (Vdss): 30V
- Drain Current-Max (Abs) (ID): 8A
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Width: 1.65mm
- Turn On Delay Time: 10 ns
- Rise Time: 15 ns
- Turn-Off Delay Time: 30 ns
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Threshold Voltage: -3V
- Current - Continuous Drain (Id) @ 25°C: 8A Tc
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Continuous Drain Current (ID): -8A
- Nominal Vgs: -3 V
- Power Dissipation-Max: 2W Ta 4.2W Tc
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Published: 2013
- Number of Pins: 6
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Power Dissipation: 2W
- Gate to Source Voltage (Vgs): 20V
- DS Breakdown Voltage-Min: 30V
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Subcategory: Other Transistors
- Length: 3.05mm
- Fall Time (Typ): 10 ns
- FET Type: P-Channel
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Series: TrenchFET?
- Operating Temperature: -55°C~150°C TA
- Weight: 19.986414mg
- Terminal Finish: Pure Matte Tin (Sn)
- Drain-source On Resistance-Max: 0.034Ohm
- Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
- Rds On (Max) @ Id, Vgs: 34m Ω @ 6.1A, 10V
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