SI4116DY-T1-E3Vishay Siliconix
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    SI4116DY-T1-E3123
    • Manufacturer No：
      SI4116DY-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      251704
    • Description：
      MOSFET N-CH 25V 18A 8-SOIC
    • Quantity：
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    Inventory:2400
    • Qty Unit Price price
    • 1 $0.99 $0.99
    • 10 $0.98 $9.8
    • 100 $0.97 $97
    • 1000 $0.96 $960
    • 10000 $0.95 $9500

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    SI4116DY-T1-E3
    • Manufacturer No：
      SI4116DY-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI4116DY-T1-E3
    • SKU：
      251704
    • Description：
      MOSFET N-CH 25V 18A 8-SOIC

    User Guide

    User Guide

    SI4116DY-T1-E3 Details

    MOSFET N-CH 25V 18A 8-SOIC

    SI4116DY-T1-E3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Pins: 8
    • Pin Count: 8
    • Published: 2016
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 30
    • Drain to Source Voltage (Vdss): 25V
    • Transistor Element Material: SILICON
    • Length: 5mm
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Turn-Off Delay Time: 50 ns
    • Fall Time (Typ): 15 ns
    • Turn On Delay Time: 13 ns
    • Series: TrenchFET?
    • Subcategory: FET General Purpose Powers
    • Current - Continuous Drain (Id) @ 25°C: 18A Tc
    • Continuous Drain Current (ID): 12.7A
    • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
    • Power Dissipation-Max: 2.5W Ta 5W Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 1925pF @ 15V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Contact Plating: Tin
    • Number of Terminations: 8
    • Terminal Position: DUAL
    • Terminal Form: GULL WING
    • Gate to Source Voltage (Vgs): 12V
    • Factory Lead Time: 14 Weeks
    • DS Breakdown Voltage-Min: 25V
    • Element Configuration: Single
    • Width: 4mm
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Power Dissipation: 2.5W
    • Height: 1.55mm
    • Rise Time: 11 ns
    • Vgs (Max): ±12V
    • Weight: 186.993455mg
    • Drive Voltage (Max Rds On,Min Rds On): 2.5V 10V
    • Vgs(th) (Max) @ Id: 1.4V @ 250μA
    • Resistance: 8.6mOhm
    • Rds On (Max) @ Id, Vgs: 8.6m Ω @ 10A, 10V
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