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- Manufacturer No：SI4200DY-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI4200DY-T1-GE3
- SKU：248867
- Description：MOSFET 25 Volts 8 Amps 2.8 Watts
User Guide
User Guide
SI4200DY-T1-GE3 Details
MOSFET 25 Volts 8 Amps 2.8 Watts
SI4200DY-T1-GE3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Radiation Hardening: No
- Part Status: Obsolete
- Number of Terminations: 8
- Published: 2016
- Peak Reflow Temperature (Cel): 260
- Element Configuration: Dual
- Drain to Source Breakdown Voltage: 25V
- Max Power Dissipation: 2W
- Gate to Source Voltage (Vgs): 16V
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Current - Continuous Drain (Id) @ 25°C: 8A
- Operating Mode: ENHANCEMENT MODE
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- FET Feature: Logic Level Gate
- FET Type: 2 N-Channel (Dual)
- Vgs(th) (Max) @ Id: 2.2V @ 250μA
- Power - Max: 2.8W
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Channels: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Pins: 8
- Pin Count: 8
- Terminal Form: GULL WING
- Time@Peak Reflow Temperature-Max (s): 30
- Factory Lead Time: 13 Weeks
- Transistor Element Material: SILICON
- Power Dissipation: 2W
- Operating Temperature: -55°C~150°C TJ
- Drain Current-Max (Abs) (ID): 8A
- Transistor Application: SWITCHING
- Rise Time: 10ns
- Fall Time (Typ): 8 ns
- Series: TrenchFET?
- Continuous Drain Current (ID): 7.3A
- Terminal Finish: PURE MATTE TIN
- Weight: 506.605978mg
- Rds On (Max) @ Id, Vgs: 25m Ω @ 7.3A, 10V
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