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SI4401BDY-T1-E3123
  • Manufacturer No:
    SI4401BDY-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    246693
  • Description:
    MOSFET P-CH 40V 8.7A 8-SOIC
  • Quantity:
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Inventory:10426
  • Qty Unit Price price
  • 1 $1.948 $1.948
  • 10 $1.928 $19.28
  • 100 $1.908 $190.8
  • 1000 $1.889 $1889
  • 10000 $1.87 $18700

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SI4401BDY-T1-E3
  • Manufacturer No:
    SI4401BDY-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SI4401BDY-T1-E3
  • SKU:
    246693
  • Description:
    MOSFET P-CH 40V 8.7A 8-SOIC

SI4401BDY-T1-E3 Details

MOSFET P-CH 40V 8.7A 8-SOIC

SI4401BDY-T1-E3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Lead Free: Lead Free
  • Number of Pins: 8
  • Pin Count: 8
  • Published: 2016
  • REACH SVHC: No SVHC
  • Time@Peak Reflow Temperature-Max (s): 30
  • Factory Lead Time: 14 Weeks
  • Element Configuration: Single
  • Gate to Source Voltage (Vgs): 20V
  • Drain to Source Voltage (Vdss): 40V
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Technology: MOSFET (Metal Oxide)
  • Power Dissipation: 1.5W
  • Vgs (Max): ±20V
  • Fall Time (Typ): 15 ns
  • FET Type: P-Channel
  • Turn On Delay Time: 16 ns
  • Threshold Voltage: -3V
  • Drain to Source Breakdown Voltage: -40V
  • Power Dissipation-Max: 1.5W Ta
  • Current - Continuous Drain (Id) @ 25°C: 8.7A Ta
  • Continuous Drain Current (ID): -8.7A
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Radiation Hardening: No
  • Contact Plating: Tin
  • Number of Terminations: 8
  • Terminal Position: DUAL
  • Terminal Form: GULL WING
  • Peak Reflow Temperature (Cel): 260
  • Max Junction Temperature (Tj): 150°C
  • Transistor Element Material: SILICON
  • Length: 5mm
  • Width: 4mm
  • Operating Temperature: -55°C~150°C TJ
  • Height: 1.75mm
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Rise Time: 15 ns
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Series: TrenchFET?
  • Resistance: 14mOhm
  • Weight: 186.993455mg
  • Turn-Off Delay Time: 97 ns
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 5V
  • Rds On (Max) @ Id, Vgs: 14m Ω @ 10.5A, 10V

Excellent

Based on reviews

Excellent

Based on reviews

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